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Nanowire Field-Effect Transistor (FET)

by Antonio Garcã­A-Loureiro, Karol Kalna, Natalia Seoane

Mdpi AG

Hardcover 96 pages English February 16, 2021

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Author:
Antonio Garcã­A-Loureiro, Karol Kalna, Natalia Seoane
Publisher:
Mdpi AG
Publication Date:
February 16, 2021
Number of pages:
96 pages
Language:
English
Binding:
Hardcover
ISBN-10:
3039362089
ISBN-13:
9783039362080