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Semiconductor Process Reliability in Practice

by Zhenghao Gan

McGraw-Hill Education

Hardcover 624 pages English October 31, 2012

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Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes: Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown
Author:
Zhenghao Gan
Publisher:
McGraw-Hill Education
Publication Date:
October 31, 2012
Number of pages:
624 pages
Language:
English
Binding:
Hardcover
ISBN-10:
007175427X
ISBN-13:
9780071754279